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The app is a complete free handbook of VLSI with diagrams and graphs. It is part of electronics & communications engineering education which brings important topics, notes, news & blog on the subject. Download the App as quick reference guide & ebook on this electronics & communications engineering subject. 

The app covers more than 90 topics of VLSI Design in detail. These topics are divided in 5 units. 

You can very easily pass and succeed in your exams or interviews, the app provides quick revision and reference to the topics like a detailed flash card. 

Each topic is complete with diagrams, equations and other forms of graphical representations for easy understanding. Some of topics Covered in this application are:

1. Semiconductor memories :Introduction and types
2. Read Only Memory (ROM)
3. Three transistor DRAM cell
4. One transistor DRAM Cell
5. Flash memory
6. Low - Power CMOS Logic Circuits: Introduction
7. Design of CMOS inverters
8. MOS Inverters : introduction to switching characteristics
9. Scan-Based Techniques
10. Built-In Self Test (BIST) Techniques
11. Historical prospective of VLSI Design : Moore's Law
12. Classification of CMOS digital circuit types
13. A Circuit Design Example
14. VLSI Design methodologies
15. VLSI Design flow
16. Design Hierarchy
17. Concept of regularity, modularity and locality
18. CMOS fabrication
19. Fabrication Process Flow : Basic Steps
20. Fabrication of the nMOS transistor
21. CMOS fabrication : p-well process
22. CMOS fabrication : n-well process
23. CMOS fabrication : twin tub process
24. Stick diagrams and mask layout design
25. MOS transistor : physical structure
26. The MOS System under External Bias
27. Structure and operation of MOSFET
28. The threshold voltage
29. Current voltage characteristics of MOSFET
30. Mosfet scaling
31. Effects of scaling
32. Small Geometry Effects
33. MOS Capacitances
34. MOS inverter
35. Voltage transfer characteristics (VTC) of MOS inverter 
36. Inverters with n-type MOSFET load
37. Resistive load inverter
38. Design of Depletion-Load Inverters
39. CMOS inverter
40. Delay time definitions
41. Calculation of Delay Times
42. Inverter Design with Delay Constrains : Example
43. Combinational MOS Logic Circuits : introduction
44. MOS Logic Circuits with Depletion nMOS Loads : Two-Input NOR Gate
45. MOS Logic Circuits with Depletion nMOS Loads : Generalized NOR structure with multiple inputs
46. MOS Logic Circuits with Depletion nMOS Loads : Transient analysis of NOR gate
47. MOS Logic Circuits with Depletion nMOS Loads : Two-Input NAND Gate
48. MOS Logic Circuits with Depletion nMOS Loads : Generalized NAND structure with multiple inputs
49. MOS Logic Circuits with Depletion nMOS Loads : Transient analysis of NAND gate
50. CMOS logic circuits : NOR2 (two input NOR ) gate
51. CMOS NAND2 (two input NAND) gate
52. Layout of Simple CMOS Logic Gates
53. Complex Logic Circuits
54. Complex CMOS Logic Gates
55. Layout of Complex CMOS Logic Gates
56. AOI and OAI Gates
57. Pseudo-nMOS Gates
58. CMOS Full-Adder Circuit & carry ripple adder
59. CMOS Transmission Gates (Pass Gates)
60. Complementary Pass-Transistor Logic (CPL)
61. Sequential MOS logic Circuits : Introduction
62. Behavior of Bistable Elements
63. The SR Latch Circuit
64. Clocked SR Latch
65. Clocked JK Latch
66. Master-Slave Flip-Flop
67. CMOS D-Latch and Edge-Triggered Flip-Flop
68. Dynamic Logic Circuits : Introduction
69. Basic Principles of Pass Transistor Circuits

All topics are not listed because of character limitations set by the Play Store.
该应用程序是VLSI的完全自由使用手册图表和图形。它是电子及通信工程教育带来重要的主题，笔记，新闻和博客关于这个问题的一部分。下载App作为快速参考指南和电子书在这个电子与通信工程学科。

该应用程序涵盖了详细的90多个主题VLSI设计。这些主题在5个单位划分。

你可以很容易地通过，并在你的考试或面试成功，应用程序提供了快速修改和参考像一个详细的闪存卡的主题。

每个主题都配有图表，方程式等形式，为便于理解的图形表示。一些在此应用中涉及的主题有：

1.半导体存储器：介绍和类型
2，只读存储器（ROM）
3.三个晶体管DRAM单元
4.一个晶体管DRAM单元
5.闪存
6.低 - 功耗CMOS逻辑电路：简介
7. CMOS反相器的设计
8. MOS逆变器：介绍开关特性
9.基于扫描技术
10.内置自测试（BIST）技术
11.历史前瞻性VLSI设计：摩尔定律
12. CMOS数字电路类型分类
13.电路设计实例
14. VLSI设计方法
15. VLSI设计流程
16.设计层次
17.规律性，模块化和局部性的概念
18. CMOS制造
19.制作工艺流程：基本步骤
20.制备nMOS晶体管的
21. CMOS制造：P阱工艺
22. CMOS制造：N阱工艺
23. CMOS制造：双桶过程
24.棒图和掩膜版图设计
25. MOS晶体管：物理结构
在外部偏置26 MOS系统
27.结构和MOSFET的操作
28.阈值电压
MOSFET的电流29.电压特性
30.场效应管结垢
缩放31.影响
32.小尺寸效应
33. MOS的电容
34. MOS逆变器
35.电压传输特性MOS逆变器（VTC）
36.逆变器与n型MOSFET负载
37.阻性负载变频器
耗尽型负载逆变器38设计
39. CMOS反相器
40.延迟时间定义
41.计算延迟时间
42.逆变器设计与延迟约束：例
43.组合MOS逻辑电路：介绍
44. MOS逻辑电路枯竭的nMOS负载：双输入或非门
45. MOS逻辑电路枯竭的nMOS负载：广义NOR结构多输入
46. MOS逻辑电路枯竭的nMOS负载：NOR门电路的瞬态分析
47. MOS逻辑电路枯竭的nMOS负载：双输入与非门
48. MOS逻辑电路枯竭的nMOS负载：广义NAND结构多输入
49. MOS逻辑电路枯竭的nMOS负载：与非门的瞬态分析
50. CMOS逻辑电路：NOR2（两个输入NOR）门
51. CMOS NAND2（两个输入NAND）门
简单的CMOS逻辑门的52布局
53.复杂的逻辑电路
54.复杂的CMOS逻辑门
复杂的CMOS逻辑门的55布局
56. AOI和OAI盖茨
57.伪nMOS的门
58. CMOS全加器电路及纹波进行加法
59. CMOS传输门（通门）
60.互补通 - 晶体管逻辑（CPL）
61. MOS时序逻辑电路：简介
62.行为双稳态元素
63. SR锁存电路
64.时钟控制SR锁存器
65.时钟控制JK锁存
66.主从触发器
67. CMOS D锁存器和边沿触发触发器
68.动态逻辑电路：简介
通晶体管电路69.基本原则

所有的话题都没有列出，因为Play商店设置字符限制的。


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